Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

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Source ISSN: 0925-9635
Author Maréchal, Aurélien, Rouger, Nicolas, Clément, Jean-Paul, Crébier, Jean-Christophe, Pernot, Julien, Koizumi, Satoshi, Teraji, Tokuyuki, Gheeraert, Etienne
Maintainer CCSD
Last Updated May 5, 2026, 19:30 (UTC)
Created May 5, 2026, 19:30 (UTC)
Identifier hal-00968208
Language en
contributor Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)
creator Maréchal, Aurélien
date 2014-05-05T00:00:00
harvest_object_id acc890b7-7c5c-432d-aeb7-cc0fe576f8df
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1016/j.diamond.2014.01.009
set_spec type:ART