Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | ISSN: 1862-6300 |
| Author | Muret, Pierre, Kumar, Amit, Volpe, Pierre-Nicolas, Wade, Mamadou, Pernot, Julien, Magaud, Laurence, Mer-Calfati, Christine, Bergonzo, Philippe |
| Maintainer | CCSD |
| Last Updated | May 5, 2026, 19:51 (UTC) |
| Created | May 5, 2026, 19:51 (UTC) |
| Identifier | hal-00967540 |
| Language | en |
| Rights | https://about.hal.science/hal-authorisation-v1/ |
| contributor | Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Muret, Pierre |
| date | 2009-09-01T00:00:00 |
| harvest_object_id | eedace51-7f10-469e-96c7-94cb7a6a3dc9 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2025-09-27T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1002/pssa.200982218 |
| set_spec | type:ART |