In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling and limits selenium use with respect to toxicity issues. In 1992, Hernandez et al.1 early published on CIGSe layers deposited by sputtering of a single quaternary CIGSe target. More recently, Frantz et al2 using such so called "one step sputtering" succeeded to obtain a CIGSe solar cell with an efficiency of 8.9%. At IMN laboratory, a dedicated chamber has been home-designed for CIGSe thin films deposition using one step sputtering. CIGSe thin films were deposited on SLG/Mo substrates by radio-frequency magnetron sputtering and then annealed under controlled atmosphere. The evolution of chemical composition, electrical and structural properties versus deposition parameters will be presented. 1. Hernández Rojas, J. L. et al.. Appl. Phys. Lett. 60, 1875-1877 (1992). 2. Frantz, J. A. et al. Thin Solid Films 519, 7763-7765 (2011).
