This work is aimed at the study of GaInP-based photovoltaic cell. The effects of In content, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the GaInP structure were investigated. We noticed that for higher In concentrations, the band gap energy decreases significantly. The structure possesses two different regions that are dopant concentration-dependent (x <0.48 and x0.48). In the extensive strain region of x<0.48, we found that the efficiency reaches 17.93% in a lattice-matched (δ=5nm) case. For a concentration x0.48, we have a compressive strain ɛ0 which leads to a higher efficiency. For x=0.9, δ=5nmand a strain of 3.3%, we achieved an efficiency of 26.6%. The results show that light conversion efficiency has considerably boosted by varying insulating layer thickness and strain values.
