Chemical topography analysis of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | ISSN: 0022-5355 |
| Author | Vallier, L., Foucher, J., Detter, X., Pargon, E., Joubert, O., Cunge, G., Lill, T. |
| Maintainer | CCSD |
| Last Updated | May 6, 2026, 20:46 (UTC) |
| Created | May 6, 2026, 20:46 (UTC) |
| Identifier | hal-00944892 |
| Language | en |
| contributor | Laboratoire des technologies de la microélectronique (LTM) ; Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Vallier, L. |
| date | 2003-05-06T00:00:00 |
| harvest_object_id | 7dc05623-8bf0-457d-9e58-c77ef6c93531 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2025-09-27T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1116/1.1563255 |
| set_spec | type:ART |