E-Beam processed GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized under both small-signal and large-signal conditions. A Large-Signal Network Analyzer was used and equivalent circuit models were obtained by combining small signal S-parameter data with large-signal time-domain waveform optimization. The impact of anode diameter size and layer design were investigated and the active layer thickness dependence of the intrinsic elements was analyzed. Large-signal measurements allowed device non-linearity evaluation.
