Electronic properties of E3 electron trap in n-type ZnO

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Source ISSN: 0370-1972
Author Chicot, Gauthier, Pernot, Julien, Santailler, Jean-Louis, Chevalier, Céline, Granier, Carole, Ferret, Pierre, Ribeaud, Alexandre, Feuillet, Guy, Muret, Pierre
Maintainer CCSD
Last Updated May 7, 2026, 06:01 (UTC)
Created May 7, 2026, 06:01 (UTC)
Identifier hal-00936922
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)
creator Chicot, Gauthier
date 2014-01-07T00:00:00
harvest_object_id 6feaa7ae-8daf-49c6-a2a1-969542055e77
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1002/pssb.201349261
set_spec type:ART