Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

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Source ISSN: 0018-9499
Author El Moukhtari, Issam, Pouget, Vincent, Darracq, Frédéric, Larue, Camille, Perdu, Philippe, Lewis, D.
Maintainer CCSD
Last Updated May 9, 2026, 03:16 (UTC)
Created May 9, 2026, 03:16 (UTC)
Identifier hal-00880480
Language en
contributor Laboratoire de l'intégration, du matériau au système (IMS) ; Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
creator El Moukhtari, Issam
date 2013-05-09T00:00:00
harvest_object_id e5b78fa3-d290-4237-87c4-f98532ccbc0f
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-03-17T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2012.2231437
set_spec type:ART