Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

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Source ISSN: 0026-2714
Author El Moukhtari, Issam, Pouget, Vincent, Larue, Camille, Darracq, Frédéric, Lewis, D., Perdu, Philippe
Maintainer CCSD
Last Updated May 9, 2026, 03:16 (UTC)
Created May 9, 2026, 03:16 (UTC)
Identifier hal-00880459
Language en
contributor Laboratoire de l'intégration, du matériau au système (IMS) ; Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
creator El Moukhtari, Issam
date 2013-11-09T00:00:00
harvest_object_id b020d050-c5cc-4365-8b4b-167ef76a58f6
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-03-17T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2013.07.129
set_spec type:ART