Junction Temperature Investigations Based on a General Semi-Analytical Formulation of Forward Voltage of Power Diodes

An original semi-analytical model, based on a general formulation of forward-voltage drop of power diodes, is presented. This model allows taking into account both high and low current injection levels, and it is used to highlight the fundamentals of the thermal calibration of power diodes. This is done for device temperature estimation during power cycling tests and thermal characterization. Theoretical results are satisfactorily compared with experimental ones in a wide range of current injection and temperature levels. A clear analysis of the physical behavior is done in order to evaluate self-heating effects and to understand high-temperature effects. The model is used to evaluate the limits of thermal calibration and to highlight the behaviors at low- and high-current injections in these calibrations.

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Source ISSN: 0018-9383
Author Khatir, Zoubir
Maintainer CCSD
Last Updated May 9, 2026, 18:16 (UTC)
Created May 9, 2026, 18:16 (UTC)
Identifier hal-00861671
Language en
contributor Laboratoire des Technologies Nouvelles (IFSTTAR/LTN) ; Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)
creator Khatir, Zoubir
date 2012-01-01T00:00:00
harvest_object_id 875903e8-9e8f-4801-a5c9-6f2abaa5ce9c
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2023-08-07T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1109/6144.974966
set_spec type:ART