Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | ISSN: 1862-6300 |
| Author | Volpe, Pierre-Nicolas, Muret, Pierre, Omnès, Franck |
| Maintainer | CCSD |
| Last Updated | May 10, 2026, 01:09 (UTC) |
| Created | May 10, 2026, 01:09 (UTC) |
| Identifier | hal-00853424 |
| Language | en |
| contributor | Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Volpe, Pierre-Nicolas |
| date | 2008-08-22T00:00:00 |
| harvest_object_id | dfda6720-e038-4214-a9dc-ee46a56e6f0a |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2025-09-27T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1002/pssa.200879724 |
| set_spec | type:ART |