Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | Japanese Journal of Applied Physics, part 2 : Letters |
| Author | Muret, Pierre, Pernot, Julien, Teraji, Tokuyuki, Ito, Toshimichi |
| Maintainer | CCSD |
| Last Updated | May 10, 2026, 01:13 (UTC) |
| Created | May 10, 2026, 01:13 (UTC) |
| Identifier | hal-00853380 |
| Language | en |
| contributor | Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Muret, Pierre |
| date | 2008-02-29T00:00:00 |
| harvest_object_id | ff0593c5-9a80-4239-84e1-66331c5b50b5 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2026-02-02T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1143/APEX.1.035003 |
| set_spec | type:ART |