Production of polycristalline silicon by natural sintering for photovoltaic applications

The invention relates to a silicon sintering process, with no external force added, which comprises positioning a silicon sample in a furnace and then heat-treating this sample at least at a certain temperature and with at least a partial pressure of oxidizing species in order to control the thickness of a silicon oxide layer on the surface thereof.

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Source https://hal.science/hal-00824487
Author Lebrun, J.M., Missiaen, J.M., Pascal, C., Garandet, J.P., Servant, F.
Maintainer CCSD
Last Updated May 11, 2026, 01:54 (UTC)
Created May 11, 2026, 01:54 (UTC)
Identifier Patent N°: FR2966287 (A1)
Language en
contributor Science et Ingénierie des Matériaux et Procédés (SIMaP) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)
creator Lebrun, J.M.
date 2012-04-20T00:00:00
harvest_object_id 1740caa2-6586-49d7-81cd-231524a8cf6f
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
set_spec type:PATENT