Terahertz Rectification by Graphene Field Effect Transistors

We demonstrate two different THz rectification mechanisms by graphene field effect transistors: a mesoscopic rectification due to the existence of 2nd-order conductance fluctuations and a rectification mechanism where THz radiation modulates simultaneously carrier velocity and carrier density.

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Source International Conference on Infrared Millimeter and Terahertz Waves
Author Coquillat, Dominique, Diakonova, Nina, Goiran, Michel, Vitiello, M. S., Vicarelli, L., Poumirol, Jean-Marie, Escoffier, Walter, Raquet, Bertrand, But, Dmytro, Teppe, Frederic, Pellegrini, V., Tredicucci, A., Knap, Wojciech
Maintainer CCSD
Last Updated May 11, 2026, 08:54 (UTC)
Created May 11, 2026, 08:54 (UTC)
Identifier hal-00816693
Language en
contributor Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
coverage Wollongong, NSW, Australia
creator Coquillat, Dominique
date 2012-09-23T00:00:00
harvest_object_id ed5cbfb5-9a2c-4eab-bd73-6472f535171f
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-02-15T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2012.6380119
set_spec type:COMM