Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

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Source ISSN: 0935-9648
Author Cario, Laurent, Vaju, Cristian, Corraze, Benoît, Guiot, Vincent, Janod, Etienne
Maintainer CCSD
Last Updated May 11, 2026, 10:17 (UTC)
Created May 11, 2026, 10:17 (UTC)
Identifier hal-00815184
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Institut des Matériaux Jean Rouxel (IMN) ; Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST) ; Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN) ; Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)
creator Cario, Laurent
date 2010-12-01T00:00:00
harvest_object_id e5cff7e9-fd24-4b2b-a36c-4acf22571c5f
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2024-04-11T00:00:00
relation info:eu-repo/semantics/altIdentifier/arxiv/1304.5607
set_spec type:ART