Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

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Source ISSN: 2041-1723
Author Guiot, Vincent, Cario, Laurent, Janod, Etienne, Corraze, Benoît, Ta Phuoc, Vinh, Rozenberg, Marcelo, Stoliar, Pablo, Cren, Tristan, Roditchev, Dimitri
Maintainer CCSD
Last Updated May 11, 2026, 10:19 (UTC)
Created May 11, 2026, 10:19 (UTC)
Identifier hal-00814337
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Institut des Matériaux Jean Rouxel (IMN) ; Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST) ; Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN) ; Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)
creator Guiot, Vincent
date 2013-04-16T00:00:00
harvest_object_id 698d8601-c692-4c1a-a6f5-09286cd3c9b0
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2026-03-19T00:00:00
relation info:eu-repo/semantics/altIdentifier/arxiv/1304.4749
set_spec type:ART