Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers

We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural and optical characterisations show that InAs QW of at least 8ML can be grown without elastic relaxation in the presence of Sb on surface. Without Sb, critical thicknesses for Stranski-Krastanov transition thinner than 3ML are usually observed[6]. The achievement of thick InAs QWs on AlAsSb is promising to reach 1.55μm ISB transition, and envisages the elaboration of new devices for optical network.

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Source International Conference on Superlattices, Nanostructures and Nanodevices
Author Zhao, Yu, Bertru, Nicolas, Folliot, Hervé, Perrin, Mathieu, Boyer-Richard, Soline, Létoublon, Antoine, Rohel, Tony, Gatel, Christophe, Ponchet, Anne
Maintainer CCSD
Last Updated May 11, 2026, 15:44 (UTC)
Created May 11, 2026, 15:44 (UTC)
Identifier hal-00809031
Language en
contributor Fonctions Optiques pour les Technologies de l'informatiON (FOTON) ; Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)
coverage Dresden, Germany
creator Zhao, Yu
date 2012-07-22T00:00:00
harvest_object_id 31424c0e-83e1-4d37-9395-d79108eb7887
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-10-22T00:00:00
set_spec type:COMM