Anomaly and defects characterization by IDS(VDS) and drain-current DLTS of Al0.25Ga0.75N/GaN/SiC HEMT's
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | Proceedings of 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012 |
| Author | Saadaoui, S., Ben Salem, M.M., Gaquière, Christophe, Maaref, H. |
| Maintainer | CCSD |
| Last Updated | May 12, 2026, 15:31 (UTC) |
| Created | May 12, 2026, 15:31 (UTC) |
| Identifier | hal-00801156 |
| Language | en |
| contributor | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| coverage | Porquerolles, France |
| creator | Saadaoui, S. |
| date | 2012-05-12T00:00:00 |
| harvest_object_id | 78d9e5f8-fc2e-465c-8227-61b54bf3f042 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2024-01-24T00:00:00 |
| set_spec | type:COMM |