Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

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Source International Workshop on Nitride semiconductors (IWN 2012).
Author Lefebvre, Pierre, Brimont, Christelle, Valvin, Pierre, Miyake, H., Hiramatsu, K., Gil, Bernard
Maintainer CCSD
Last Updated May 13, 2026, 12:12 (UTC)
Created May 13, 2026, 12:12 (UTC)
Identifier hal-00797472
Language en
contributor Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
coverage Sapporo, Japan
creator Lefebvre, Pierre
date 2012-10-14T00:00:00
harvest_object_id bcee270f-425d-438c-9eb5-c1a0d781e6aa
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-08-13T00:00:00
set_spec type:POSTER