InAs hot electron transistors with cutoff frequency above 200 GHz

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Field Value
Source 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012
Author Nguyen Van, H., Baranov, A. N., Teissier, R., Zaknoune, M.
Maintainer CCSD
Last Updated May 13, 2026, 13:05 (UTC)
Created May 13, 2026, 13:05 (UTC)
Identifier hal-00797314
Language en
contributor Institut d’Electronique et des Systèmes (IES) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
coverage Santa Barbara, CA, United States
creator Nguyen Van, H.
date 2012-05-13T00:00:00
harvest_object_id 4de3dc69-61e9-4c52-ab00-d779c3faa122
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2024-01-24T00:00:00
set_spec type:COMM