Pressure sensors based on AlGaN/GaN High Electron Mobility Transistor: An investigation of electricalparameters influences to response sensitivity
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | Proc. of UK Nitride Consortium (UKNC) Meeting |
| Author | Le Boulbar, E., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, Libor, Johander, P., Lalinsky, T., Bowen, C.R., Allsopp, D.W.E. |
| Maintainer | CCSD |
| Last Updated | May 15, 2026, 10:43 (UTC) |
| Created | May 15, 2026, 10:43 (UTC) |
| Identifier | hal-00772377 |
| Language | en |
| contributor | University of Bath [Bath] |
| coverage | Bath, United Kingdom |
| creator | Le Boulbar, E. |
| date | 2012-01-04T00:00:00 |
| harvest_object_id | 80fe1fa2-4dfe-41c4-b9de-2f47d9b4c1fc |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2026-03-26T00:00:00 |
| set_spec | type:COMM |