Measurement of thermal conductance of silicon nanowires at low temperature

We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3Ω method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.

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Source ISSN: 0021-8979
Author Bourgeois, Olivier, Fournier, Thierry, Chaussy, Jacques
Maintainer CCSD
Last Updated May 9, 2026, 03:23 (UTC)
Created May 9, 2026, 03:23 (UTC)
Identifier hal-00088036
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Thermodynamique et biophysique des petits systèmes (NEEL - TPS) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)
creator Bourgeois, Olivier
date 2007-01-01T00:00:00
harvest_object_id bb4ff0bf-8b1a-4a53-812f-ff3315042ffd
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
relation info:eu-repo/semantics/altIdentifier/arxiv/cond-mat/0608705
set_spec type:ART