Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films

Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.

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Source ISSN: 0022-3727
Author Reymond, Vincent, Bidault, Olivier, Michau, Dominique, Maglione, Mario, Payan, Sandrine
Maintainer CCSD
Last Updated May 14, 2026, 13:20 (UTC)
Created May 14, 2026, 13:20 (UTC)
Identifier hal-00078741
Language en
contributor Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB) ; Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)
creator Reymond, Vincent
date 2006-05-14T00:00:00
harvest_object_id 3339a454-2ba1-4b79-9871-090a7f476e61
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-12-10T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/39/6/029
set_spec type:ART