Method for forming a bipolar transistor stabilized with electrical insulating elements

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Source https://hal.science/hal-00076922
Author Delage, Sylvain, Cassette, Simone, Henkel, Achim, Salzenstein, Patrice
Maintainer CCSD
Last Updated May 29, 2026, 05:00 (UTC)
Created May 29, 2026, 05:00 (UTC)
Identifier Patent N°: US2002031892
Language en
contributor Thomson-CSF Laboratoire Central de Recheche (THOMSON-CSF LCR) ; Thomson
creator Delage, Sylvain
date 2002-03-14T00:00:00
harvest_object_id 39606f45-2626-468b-a826-c27f4e47e99a
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2019-04-19T00:00:00
set_spec type:PATENT