Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | ISSN: 0038-1101 |
| Author | Deleruyelle, D., Putero, Magali, Ouled-Khachroum, T., Bocquet, Marc, Coulet, M.V., Boddaert, Xavier, Calmes, C., Muller, Christophe |
| Maintainer | CCSD |
| Last Updated | May 30, 2026, 04:00 (UTC) |
| Created | May 30, 2026, 04:00 (UTC) |
| Identifier | emse-00767177 |
| Language | en |
| Rights | https://about.hal.science/hal-authorisation-v1/ |
| contributor | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP) ; Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Deleruyelle, D. |
| date | 2012-05-30T00:00:00 |
| harvest_object_id | 567c3184-7477-4d35-8d29-acd7bd18f05f |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2026-02-07T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2012.06.010 |
| set_spec | type:ART |