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GaN/Al(Ga)N quantum wells for intersubband optoelectrnics in near-, mid- and ...
This work reports on electronic design, epitaxial growth and characterization of GaN/Al(Ga)N quantum wells which constitute the active region of intersubband (ISB)... -
Optical study of GaN nanowires and GaN / AlN microcavities
This work focuses on the optical study of GaN nanowires and AlN microcavities containing GaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line... -
GaN based polar and nonpolar heterostructures grown on ZnO for optoelectronic...
This work focus on the integration of III-nitride materials, by molecular beam epitaxy (MBE), on ZnO based templates and substrates. The objective is to explore the... -
Study of catalysts based on nitrures and oxynitrures for propane ammoxidation
Acrylonitrile is an intermediate of the chemical industry, used for synthesis ofnumerous polymers and coating. It is produced by ammoxidation of propene, which becomes... -
High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of poi...
Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types...
