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160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management
International audience -
Terahertz detection using Si-SiGe MODFETs
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by... -
AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were... -
Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology
A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The...
