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Physico- chemical mechanisms involved in the silicon plasma etching cryogenic...
In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of... -
Electrical characterization and reliability of FDSOI transistors with High-k ...
The integration of High-k dielectrics in transistors gate stacks lead to new complex reliability issues. Furthermore new problematics appear with the use of fully... -
Size effects in the mechanical behaviour of metallic glasses
The lack of cristalline structure in metallic glasses suggests that no mechanical size effect could be expected. However, if the sample size decreases, a transition... -
The new strategy based on Innovative Projects in Microelectronics and Nanotec...
International audience -
Développement d'un biocapteur couplant la résonance des plasmons de surface e...
To begin with, the characteristics of a DNA hybridization intermolecular interaction at the interface were defined in order to deduce the specifications for our... -
Detection of delaminations in sub-wavelength thick multi-layered packages fro...
International audience -
Developpement of an innovative process for shallow trench isolation gap-filli...
Achieved at the beginning of the integrated circuits manufacturing, shallow trench isolation permits to electrically isolate transistors from each other's to avoid...
