11 datasets found

From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated by low-k materials (porous SiOCH). These porous materials are...

This work focuses on the study of the interactions between plasmas used in microelectronic processes and chemically amplified photoresists. The fabrication processes...

From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated by low-k materials (porous SiOCH). These porous materials are...

With the constant decrease of the size of the transistors in microelectronics, the characterization tools have to be more and more accurate and have to provide higher...

In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of...

The integration of High-k dielectrics in transistors gate stacks lead to new complex reliability issues. Furthermore new problematics appear with the use of fully...

The lack of cristalline structure in metallic glasses suggests that no mechanical size effect could be expected. However, if the sample size decreases, a transition...

International audience

To begin with, the characteristics of a DNA hybridization intermolecular interaction at the interface were defined in order to deduce the specifications for our...

International audience

Achieved at the beginning of the integrated circuits manufacturing, shallow trench isolation permits to electrically isolate transistors from each other's to avoid...