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Unintentional incorporation of H and related structural and free-electron pro...
International audience -
Relationships Formalization for Model-Based Product Lines
International audience -
Structural, optical and electronic properties of InN films and In rich hetero...
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and... -
The structure of InN layers and (In, Al) alloys
Due to their promising optoelectronic and electronic applications, nitrogen based III-V compound semiconductors (AlN, GaN, InN) and their alloys (InAlN, InGaN, AlGaN)... -
Nanostrucuration and self-assembly of nano-objects for microelectronics appli...
The following works are base on the study of self assembly structures at the nanometric scale. At this scale the surface energy have a major impact in this... -
Systèmes épitaxiés faiblement liés : le cas Ge/SrTiO3
With the recent developments of the microelectronic industry, the intrinsic limits of the classical CMOS materials are being reached because of the strong... -
GaN/Al(Ga)N quantum wells for intersubband optoelectrnics in near-, mid- and ...
This work reports on electronic design, epitaxial growth and characterization of GaN/Al(Ga)N quantum wells which constitute the active region of intersubband (ISB)...
