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Achievement and perspective of GaN technology for microwave applications
International audience -
160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management
International audience -
GaN technology for microwave applications
International audience -
Terahertz detection using Si-SiGe MODFETs
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by... -
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are... -
Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology
A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The...
