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Study of SiGe nanowires growth by chemical vapour deposition and characteriza...
Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force microscopy.The use of semiconductor nanowires as building block for... -
Full-band monte carlo resolution of the boltzmann transport equation, applied...
The aim of this work is the study of charge carriers dynamic under high carrier concentration regimes. The « Full-Band » Monte Carlo method is used for charge carrier... -
Metamorphic growth by Molecular Beam Epitaxy and physical characterizations f...
Thesis available online from January 2006Previously available on the website of the Epitaxy Team at IEMNTransferred on http://tel.ccsd.cnrs.fr on May 21st, 2006 (for the new... -
Solving Boltzmann transport equation for phonons and applications
This work is dedicated to the study of phonon transport and dynamics via the solution of Boltzmann Transport Equation (BTE) for phonons. The Monte Carlo stochastic... -
Systèmes épitaxiés faiblement liés : le cas Ge/SrTiO3
With the recent developments of the microelectronic industry, the intrinsic limits of the classical CMOS materials are being reached because of the strong...
