Power electronics has a role increasingly growing up in transport: electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. In this context, an early failure indicator would predict system failures before it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly.
CONTRIBUTION A L'IDENTIFICATION DE NOUVEAUX INDICATEURS DE DEFAILLANCE DES MODULES DE PUISSANCE A IGBT