CONTRIBUTION A L'IDENTIFICATION DE NOUVEAUX INDICATEURS DE DEFAILLANCE DES MODULES DE PUISSANCE A IGBT
type: Dataset
contact point: Organization
  fn: CCSD
keyword: infoeu-reposemanticsdoctoralthesis
keyword: flexion-quatre-points
keyword: mosfet-de-puissance
keyword: court-circuit
keyword: modelisation-multi-physique
keyword: modelisation-electro-thermo-mecanique
keyword: multiaxiale
keyword: caracterisation-electrique-statique-et-dynamique
keyword: fiabilite-des-assemblages-de-puissance
keyword: spitronengineering-sciences-physicselectronics
keyword: igbt
keyword: caracterisation-electromecanique
keyword: contrainte-equivalente-von-mises
keyword: theses
keyword: contrainte-uniaxiale
landing page: https://theses.hal.science/tel-00988332
description: Power electronics has a role increasingly growing up in transport: electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. In this context, an early failure indicator would predict system failures before it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly.
issued: 2026-05-05T11:52:12.550089
language: fr
modified: 2026-05-05T11:52:12.550093

test_moissonnage_selune
type: Agent

CONTRIBUTION A L'IDENTIFICATION DE NOUVEAUX INDICATEURS DE DEFAILLANCE DES MODULES DE PUISSANCE A IGBT
type: Distribution
access URL: https://theses.hal.science/tel-00988332
format: HTML
issued: 2026-05-05T11:52:12.556986
modified: 2026-05-05T11:52:12.532994