@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00987632v1> a dcat:Dataset ;
    dct:description """
              This research characterizes and models the mismatch of electrical parameters in advanced MOS transistors. All characterizations are made through a test structure, which is experimentally validated using a structure based on Kelvin method. A model, valid in the linear region, is proposed. It is used for modeling the threshold voltage fluctuations of the transistors with pocket-implants, for any transistor length and gate voltage. It gives a deep understanding of the mismatch, especially for devices with non-uniform channel. Another study analyzes the mismatch of the drain current by characterizing and modeling in terms of the drain voltage. A second model is then proposed for transistors without pocket-implants. In order to apply this model, the correlation of threshold voltage fluctuations and mobility fluctuations must be considered. Characterizations are also performed on transistors with pocket-implants, showing a new drain current mismatch behavior for long transistors. Finally, characterizations are made to analyze the impact of gate roughness fluctuations on mismatch.
            """ ;
    dct:identifier "NNT: 2011GRENT044" ;
    dct:issued "2026-05-05T12:02:46.517031"^^xsd:dateTime ;
    dct:language "fr" ;
    dct:modified "2026-05-05T12:02:46.517036"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Description and modelling of the random electric parameters fluctuations on advanced CMOS techology-based devices" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00987632v1/resource/01f7b27d-940d-4cca-a9db-adcb293a44f8> ;
    dcat:keyword "appariement",
        "desappariement",
        "fluctuations",
        "halos",
        "infoeu-reposemanticsdoctoralthesis",
        "mismatch",
        "poches",
        "pocket",
        "spiotherengineering-sciences-physicsother",
        "theses",
        "variabilite",
        "variability" ;
    dcat:landingPage <https://theses.hal.science/tel-00987632> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00987632v1/resource/01f7b27d-940d-4cca-a9db-adcb293a44f8> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-05T12:02:46.525200"^^xsd:dateTime ;
    dct:modified "2026-05-05T12:02:46.499246"^^xsd:dateTime ;
    dct:title "Description and modelling of the random electric parameters fluctuations on advanced CMOS techology-based devices" ;
    dcat:accessURL <https://theses.hal.science/tel-00987632> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .

<https://theses.hal.science/tel-00987632> a foaf:Document .