Capacitance spectroscopy in hydrogenated amorphous silicon Schottky diodes and high efficiency silicon heterojunction solar cells
type: Dataset
contact point: Organization
  fn: CCSD
keyword: strong-inversion-layer
keyword: cellules-photovoltaiques-a-heterojonctions-de-silicium
keyword: amorphous-silicon
keyword: couche-dinversion-forte
keyword: silicon-heterojunction
keyword: capacitance-spectroscopy
keyword: theses
keyword: physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother
keyword: spectroscopie-de-capacite
keyword: infoeu-reposemanticsdoctoralthesis
keyword: silicium-amorphe
landing page: https://theses.hal.science/tel-00974786
description: In this thesis, research on a-Si:H Schottky diodes and a-Si:H/c-Si heterojunctions is presented with the focus on the capacitance spectroscopy and information on electronic properties that can be derived from this technique. Last years a-Si:H/c-Si heterojunctions (HJ) have received growing attention as an approach which combines wafer and thin film technologies due to their low material consumption and low temperature processing. HJ solar cells benefit from lower fabrication temperatures thus reduced costs, possibilities of large-scale deposition, better temperature coefficient and lower silicon consumption. The most recent record efficiency belongs to Panasonic with 24.7% for a cell of 100 cm² was obtained. The aim of this thesis is to provide a critical study of the capacitance spectroscopy as a technique that can provide information on both subjects: DOS in a-Si:H and band offset values in a-Si:H/c-Si heterojunctions.The first part of the manuscript is devoted to capacitance spectroscopy in a-Si:H Schottky diodes. The interest is concentrated on the simplified treatment of the temperature and frequency dependence of the capacitance that allows one to extract the density of states at the Fermi level in a-Si:H. We focus on the study of the reliability and validity of this approach applied to a-Si:H Schottky barriers with various magnitudes and shapes of the DOS. Several structures representing n-type and undoped hydrogenated amorphous silicon Schottky diodes are modeled with the help of numerical simulation softwares. We show that the reliability of the studied treatment drastically depends on the approximations used to obtain the explicit analytical expression of the capacitance in such an amorphous semiconductor.In the second part of the chapter, we study the possibility of fitting experimental capacitance data by numerical calculations with the input a-Si:H parameters obtained from other experimental techniques. We conclude that the simplified treatment of the e…
identifier: NNT: 2013PA112088
issued: 2026-05-05T16:14:51.591043
language: fr
modified: 2026-05-05T16:14:51.591047

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Capacitance spectroscopy in hydrogenated amorphous silicon Schottky diodes and high efficiency silicon heterojunction solar cells
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access URL: https://theses.hal.science/tel-00974786
format: HTML
issued: 2026-05-05T16:14:51.594324
modified: 2026-05-05T16:14:51.580177