Characterization of structural defects in wide...
URL: https://theses.hal.science/tel-00965640
Dataset description:
Silicon carbide is a promising semiconductor for high temperature and power electronics. Its growth process has been refined continuously in the last years but there is still...
Source: Characterization of structural defects in wide band gap semiconductors
There are no views created for this resource yet.
Additional Information
| Field | Value |
|---|---|
| Data last updated | unknown |
| Metadata last updated | May 5, 2026 |
| Created | unknown |
| Format | HTML |
| License | https://about.hal.science/hal-authorisation-v1/, info:eu-repo/semantics/OpenAccess |
| Created | 2 weeks ago |
| Id | eea9d8f0-ddd2-4d99-80a7-6d56f613c8ad |
| Package id | oai-hal-tel-00965640v1 |
| Resource type | HTML |
| State | active |