@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

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    dct:description """
              This work focus on the integration of III-nitride materials, by molecular beam epitaxy (MBE), on ZnO based templates and substrates. The objective is to explore the potential of (Al,Ga)N/GaN and (In,Ga)N/GaN multi-quantum wells (MQWs) grown on ZnO for the fabrication of light emitting diodes (LEDs). In particular, two crystal orientations are studied: the polar (0001) plane (c-plane) and the nonpolar (11-20) plane (a-plane). The structural and optical properties of epitaxial layers are mainly characterized by AFM, SEM, XRD, TEM and PL. A-plane (11-20) GaN layers have been grown on a-(Zn,Mg)O/r-sapphire templates by MBE. The surface morphology, the crystal microstructure, as well as the optical emission of a-GaN layers show strong anisotropic properties. A series of a-plane Al0.2Ga0.8N/GaN MQWs with different well thicknesses have been fabricated and the absence of quantum confined Stark effect in these nonopolar heterostructures has been evidenced. Processes of growing GaN on both c- and a- plane bulk ZnO substrates have been developed. In particular, GaN layers with either Ga- or N- polarities have been grown on O face ZnO, and their polarity determination mechanisms have been analyzed. (In,Ga)N/GaN MQWs based blue LEDs have been demonstrated on c- ZnO substrates. Output powers of 40 µW at 20 mA and 0.1 mW at 60 mA have been measured. Finally, a-plane (In,Ga)N/GaN MQWs are fabricated on bulk a-ZnO substrates and compared with c-plane MQWs grown under similar conditions. PL measurements indicate that a-plane MQWs exhibit a lower In incorporation efficiency and a polarized emission along <1-100> direction.
            """ ;
    dct:identifier "NNT: 2013NICE4067" ;
    dct:issued "2026-05-07T16:19:29.424994"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-07T16:19:29.425000"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "GaN based polar and nonpolar heterostructures grown on ZnO for optoelectronic applications" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00923180v1/resource/0b63c632-0d11-4550-83f8-c44b6786d2a0> ;
    dcat:keyword "dels",
        "gan",
        "infoeu-reposemanticsdoctoralthesis",
        "leds",
        "nitrides",
        "nitrures",
        "nonpolaire",
        "nonpolar",
        "physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother",
        "substrat-zno",
        "theses",
        "zno-substrates" ;
    dcat:landingPage <https://theses.hal.science/tel-00923180> .

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    dct:format "HTML" ;
    dct:issued "2026-05-07T16:19:29.434327"^^xsd:dateTime ;
    dct:modified "2026-05-07T16:19:29.411468"^^xsd:dateTime ;
    dct:title "GaN based polar and nonpolar heterostructures grown on ZnO for optoelectronic applications" ;
    dcat:accessURL <https://theses.hal.science/tel-00923180> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .

<https://theses.hal.science/tel-00923180> a foaf:Document .