@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

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    dct:description """
              This study deals with the hybrid integration of Single Electron Transistors (SET) on a CMOS technology node. SET devices present high potentiels, particularly in terms of energy efficiency, but can't completely replace CMOS in electrical circuits. However, SETs and CMOS devices combination can solve this issue, opening the way toward very low operating power circuits, and high integration density. This thesis proposes itself to use for Back-End-Of-Line (BEOL) SETs realization, meaning in the oxide encapsulating CMOS, the nanodamascene fabrication process devised by C. Dubuc.
            """ ;
    dct:identifier "NNT: 2012ISAL0114" ;
    dct:issued "2026-05-09T16:38:52.181833"^^xsd:dateTime ;
    dct:language "fr" ;
    dct:modified "2026-05-09T16:38:52.181837"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Hybrid integration of single electron transistor on a CMOS technology node" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00863770v1/resource/350c7e1c-ee45-4acc-85fa-4795a0693a40> ;
    dcat:keyword "caracterisation-electrique",
        "circuit-integre-complementary-metal-oxide-semiconductor---cmos",
        "composant-a-un-electron",
        "electrical-characterisation",
        "electronics",
        "electronique",
        "infoeu-reposemanticsdoctoralthesis",
        "mosfet---metal-oxide-semiconductor-field-effect---transistor",
        "nanodamascene",
        "nanotechnologie",
        "nanotechnology",
        "single-electron-device",
        "single-electron-transistor---set",
        "spiotherengineering-sciences-physicsother",
        "theses",
        "transistor-a-un-electron---set",
        "transistor-mosfet---composant-a-effet-de-champ-a-grille-isolee" ;
    dcat:landingPage <https://theses.hal.science/tel-00863770> .

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    dct:issued "2026-05-09T16:38:52.192224"^^xsd:dateTime ;
    dct:modified "2026-05-09T16:38:52.164252"^^xsd:dateTime ;
    dct:title "Hybrid integration of single electron transistor on a CMOS technology node" ;
    dcat:accessURL <https://theses.hal.science/tel-00863770> .

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<https://theses.hal.science/tel-00863770> a foaf:Document .