@prefix dcat: . @prefix dct: . @prefix foaf: . @prefix vcard: . @prefix xsd: . a dcat:Dataset ; dct:description """ This thesis is dedicated to studying sharp switching devices, including the tunneling field-effect-transistor(TFET) and a new feedback device we have named the Z2-FET, for low power logic and memory applicationscompatible with modern silicon technology. We have extensively investigated TFETs with various gate oxides,channel materials and structures, fabricated on fully-depleted silicon-on-insulator (FD-SOI) substrates.Low-frequency noise (LFN) measurements were performed on TFETs, showing the dominance of randomtelegraphy signal (RTS) noise, which reveals the tunneling mechanism. An analytical TFET model combiningtunneling and channel transport has been developed, showing agreement with the experimental and simulationresults.We also conceived and demonstrated a new device named the Z2-FET (for zero subthreshold swing andzero impact ionization), which exhibits extremely sharp switching with subthreshold swing SS < 1 mV/dec,ION/IOFF current ratio reaching 109, gate-controlled hysteresis and scalability down to 20 nm. The Z2-FEToperates with feedback between carriers flow and their injection barriers. The Z2-FET is used for one-transistordynamic random access memory (DRAM) with supply voltage down to 1.1 V, retention time up to 5.5 s andaccess speed reaching 1 ns. The static RAM (SRAM) application is also demonstrated without the need ofrefreshing stored data.Following our work on gate-induced drain leakage (GIDL) current in short-channel FD-SOI MOSFETs andon TFET operating mechanisms, we propose a new class of optimized TFETs with enhanced ION, based on thebipolar amplification of the tunneling current. Simulations of the bipolar-enhanced tunneling FET (BET-FET),combining the TFET with a heterojunction bipolar transistor, show promising results, with ION > 4×10-3 A/��mand SS < 60 mV/dec over 7 decades of current, outperforming all silicon-compatible TFETs reported to date.The thesis concludes with future research directions in the sharp-switching device arena. """ ; dct:identifier "NNT: 2012GRENT052" ; dct:issued "2026-05-10T07:45:08.539105"^^xsd:dateTime ; dct:language "fr" ; dct:modified "2026-05-10T07:45:08.539109"^^xsd:dateTime ; dct:publisher ; dct:title "(Innovative sharp switching devices : from TFET to Z2-FET" ; dcat:contactPoint [ a vcard:Organization ; vcard:fn "CCSD" ] ; dcat:distribution ; dcat:keyword "cellule-memoire-a-un-transistor", "commutation-abrupte", "feedback", "infoeu-reposemanticsdoctoralthesis", "mosfet", "retroaction", "sharp-switch", "silicium-sur-isolant-soi", "silicon-on-insulator-soi", "single-transistor-memory", "spiotherengineering-sciences-physicsother", "theses", "tunnel-fet", "tunneling-fet", "z2-fet" ; dcat:landingPage . a dcat:Distribution ; dct:format "HTML" ; dct:issued "2026-05-10T07:45:08.541036"^^xsd:dateTime ; dct:modified "2026-05-10T07:45:08.518645"^^xsd:dateTime ; dct:title "(Innovative sharp switching devices : from TFET to Z2-FET" ; dcat:accessURL . a foaf:Agent ; foaf:name "test_moissonnage_selune" . a foaf:Document .