Models developpment for power performance assessment of advanced CMOS technologies sub-20nm.
type: Distribution
access URL: https://theses.hal.science/tel-00820068
format: HTML
issued: 2026-05-11T05:49:19.917574
modified: 2026-05-11T05:49:19.903108

test_moissonnage_selune
type: Agent

Models developpment for power performance assessment of advanced CMOS technologies sub-20nm.
type: Dataset
contact point: Organization
  fn: CCSD
keyword: cmos
keyword: speed
keyword: integrated-circuit
keyword: circuit-integre
keyword: performance
keyword: model
keyword: theses
keyword: spiotherengineering-sciences-physicsother
keyword: modele
keyword: mastar
keyword: infoeu-reposemanticsdoctoralthesis
landing page: https://theses.hal.science/tel-00820068
description: Since the commercialization of the first integrated circuit in 1971, the microelectronic industry has fixed as an objective to reduce MOSFET transistor dimensions, following Moore's law. As indicated by Dennard, this miniaturization automatically improves device performances. Starting from the 28-22nm technological nodes, short channel effects are to strong and industrial companies choose to introduce new device structure: FDSOI for STMicroelectronics and Trigate for Intel. In such a context, CMOS technology performance evaluation is key and this thesis proposes to evaluate them at circuit level. Specific models for electrostatic parameters and parasitic capacitances for each device structure are developed for each device structure. Those models have first been used to evaluate performances of advanced technologies, such as III-V/Ge co-integration and 3D monolithic integration and have then been implemented in VerilogA to ensure compatibility with conventional CAD tools such as ELDO. This provides a compact model, predictive and usable for each device structure, which has been used to evaluated logic and SRAM performances of BULK, FDSOI and Trigate devices for the 20nm and 16nm technology node.
identifier: NNT: 2012GRENT073
issued: 2026-05-11T05:49:19.915034
language: fr
modified: 2026-05-11T05:49:19.915039