Pulsed Plasmas for Etch Applications
type: Dataset
description: The continuous downscaling in microelectronics imposes increasing demands on the plasma processes and traditional ways for process optimization reach their limits. New strategies are needed and innovations in the field of plasma processes are being developed: e.g. the use of pulsed plasmas. In this thesis, a pulsed HBr/O2 etch plasma is studied. Various in-situ diagnostics are used to characterize pulsed plasmas in an industrial 12” etch reactor. The silicon etching is investigated by XPS and electron microscopy. We show that the plasma dissociation and temperature are reduced if the plasma is pulsed at low duty cycles. The Br radical flux with respect to the on-time of the plasma is increased and the influence of the O radical is decreased, leading to enhanced time compensated silicon etch rates, a higher selectivity towards SiO2 and a more homogeneous etching. The pattern profiles can be controlled via the sidewall passivation layer formation that is closely linked to the duty cycle.
landing page: https://theses.hal.science/tel-00820065
identifier: NNT: 2012GRENT072
keyword: diagnostic-de-plasma
keyword: gravure-de-silicium
keyword: gravure-par-plasma
keyword: infoeu-reposemanticsdoctoralthesis
keyword: microelectronics
keyword: microelectronique
keyword: plasma-diagnostics
keyword: plasma-etching
keyword: plasmas-pulses
keyword: pulsed-plasma
keyword: silicon-etching
keyword: spiotherengineering-sciences-physicsother
keyword: theses
issued: 2026-05-11T04:01:22.065588
modified: 2026-05-11T04:01:22.065593
language: fr
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Pulsed Plasmas for Etch Applications
type: Distribution
format: HTML
access URL: https://theses.hal.science/tel-00820065
issued: 2026-05-11T04:01:22.068116
modified: 2026-05-11T04:01:22.043404