Theoretical study of electronic transport in semiconductor quantum dot-based nanodevices
type: Distribution
access URL: https://theses.hal.science/tel-00783430
format: HTML
issued: 2026-05-14T18:49:00.428057
modified: 2026-05-14T18:49:00.355409

Theoretical study of electronic transport in semiconductor quantum dot-based nanodevices
type: Dataset
contact point: Organization
  fn: CCSD
keyword: poisson-schrodinger
keyword: shot-noise
keyword: bruit-de-grenaille
keyword: single-electron-transistor
keyword: physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother
keyword: theses
keyword: coulomb-blockade
keyword: thermoelectricite
keyword: infoeu-reposemanticsdoctoralthesis
keyword: thermoelectricity
keyword: transistors-a-un-electron
keyword: blocage-de-coulomb
keyword: physical-simulation
keyword: quantum-dot
landing page: https://theses.hal.science/tel-00783430
description: After a continuous reduction which has begun 50 years ago, the feature size of electronic devices has now reached the nanometer scale, opening the door to quantum phenomena. The final stage of this miniaturization, the quantum dot, in which the electrons are confined in all three directions of space, has remarkable properties, such as an increase of the bandgap between the conduction band and the valence band, and the discretization of energy levels. Another consequence of confinement, the strong electron-electron interaction occurring in the dot induces a significant charging energy which may prevent an electron entering the dot if an external energy is not provided to the system. This charge blocking is called Coulomb blockade. The single electron transistor (SET), the elementary device taking advantage of Coulomb blockade, is slated for some applications, such as the realization of digital functions or charge sensors. Among the areas concerned, the thermoelectricity, i.e., the possibility of creating an electrical current from a temperature gradient, is very interested in single-electron devices due to their discrete energy levels which lead to a very low thermal conductivity.This thesis presents the simulator SENS (Single-Electron Nanodevice Simulation) developed in the team and the part I have developed specifically for the simulation of SET. It is based on a 3D solver of Poisson and Schrödinger coupled equations, necessary for the determination of the wave functions in the case of silicon, and dependent on voltages applied to the electrodes. Tunnel transfer rates are then calculated by Fermi's golden rule. In-depth study of the current in the SETs gives access to diamond stability diagrams, and demonstrates the importance of parameters such as dot size, tunnel the barriers thicknesses, the temperature and the number of electrons occupying the dot. The study of the electron current and the heat flow in the presence of a temperature difference at the electrodes …
identifier: NNT: 2012PA112409
issued: 2026-05-14T18:49:00.390595
language: fr
modified: 2026-05-14T18:49:00.390600

test_moissonnage_selune
type: Agent