Structural, optical and electronic properties of InN films and In rich heterostructures for optoelectronic applications
type: Dataset
description: The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. The aim of this work has been twofold: to investigate the electrical conduction in InN layers and the origin of the high emission efficiency in InGaN/GaN Quantum Wells (QWs). The surface electron accumulation in InN layers is still an important limitation to device applications. We have explored this point using low frequency noise measurements on Plasma Assisted Molecular Beam Epitaxy (PAMBE) InN layers and we demonstrated that the bulk electrical conductivity of InN can be accessed. The investigation of quantum wells produced by Molecular Beam Epitaxy (MBE) or Metalorganic Vapour Phase Epitaxy (MOVPE), has been carried out through microstructural analyses by Transmission Electron Microscopy techniques(TEM, HRTEM, STEM) in correlation with optical properties on a large number of samples grown in different growth conditions. This experimental work has allowed us to obtain a critical view on the role of the growth conditions and such parameters as the well morphology, composition fluctuations, as well as the V shaped defects on the current explanations of high emission efficiency in InGaN/GaN QWs.
issued: 2026-05-15T00:29:40.079282
language: en
modified: 2026-05-15T00:29:40.079288
contact point: Organization
  fn: CCSD
keyword: bruit-basse-frequence
keyword: bulk-electrical-conduction
keyword: conduction-electrique-en-volume
keyword: fluctuations-de-composition
keyword: gan
keyword: hrstem
keyword: hrtem
keyword: in-compositional-fluctuations
keyword: infoeu-reposemanticsdoctoralthesis
keyword: ingan
keyword: inn
keyword: low-frequency-noise
keyword: mbe
keyword: met
keyword: movpe
keyword: pambe
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: puits-quantique
keyword: quantum-wells
keyword: stem
keyword: tem
keyword: theses
landing page: https://theses.hal.science/tel-00779495

Structural, optical and electronic properties of InN films and In rich heterostructures for optoelectronic applications
type: Distribution
format: HTML
issued: 2026-05-15T00:29:40.147699
modified: 2026-05-15T00:29:39.990706
access URL: https://theses.hal.science/tel-00779495

test_moissonnage_selune
type: Agent