Nanocharacterization of resistance switching oxides for resistive memories
type: Dataset
contact point: Organization
  fn: CCSD
keyword: resistive-memories
keyword: hfo2
keyword: electron-energy-loss-spectroscopy
keyword: spectroscopie-de-photoelectrons
keyword: photoelectron-spectroscopy
keyword: theses
keyword: spectroscopie-de-pertes-denergie
keyword: spiotherengineering-sciences-physicsother
keyword: memoires-resistives
keyword: infoeu-reposemanticsdoctoralthesis
keyword: nio
landing page: https://theses.hal.science/tel-00770174
description: With low energy consumption, non-volatile memories are interesting for portative applications (USB, mobile phone, laptop …). The Flash memory technology is reaching its physical boundaries and needs to be replaced. New materials and architectures are currently investigated. Oxide Resistive Random Access Memory (OxRRAM) is considered as a good candidate. It is based on a M-O-M (Metal-Oxide-Metal) stack. The information is stored using an electric field or a current that modulates the resistance of the oxide. A better understanding of the resistance switching mechanism is required in order to control the performances of the devices. We investigate the dielectric breakdown that activates the resistance switching properties. Physico-chemical characterization at the nanoscale is required. In this work, we propose proper physico-chemical and electrical measurements. Sample preparation is also considered. Nickel and hafnium oxide are investigated. Besides the evolution of the electrical properties, we analyze the oxide modification at three levels : the chemical composition, the morphology and the electronic structure. Keywords : resistive memory, resistance switching mechanism, dielectric breakdown, NiO, HfO2, photoelectron spectroscopy, electronic transmission microscopy, atomic force microscopy, oxygen vacancies.
identifier: NNT: 2012GRENI023
issued: 2026-05-15T13:58:52.498644
language: fr
modified: 2026-05-15T13:58:52.498649

test_moissonnage_selune
type: Agent

Nanocharacterization of resistance switching oxides for resistive memories
type: Distribution
access URL: https://theses.hal.science/tel-00770174
format: HTML
issued: 2026-05-15T13:58:52.538131
modified: 2026-05-15T13:58:52.474394