Growth mechanism and crystalline defects in ZnO nanowire structures for LEDs
type: Dataset
description: Quantum well ZnO nanowires and p-type doping by nitrogen ion implantation are studied to make ultraviolet light-emitting diodes. O-polar pyramids and Zn-polar nanowires on sapphire and ZnO substrates are grown. Organized growth of nanowires on a masked Zn-polar ZnO is demonstrated. Similarly, GaN pyramids and nanowires are grown on Ga and N-polar GaN respectively. On sapphire, the dislocation elimination in the underlying pyramids is analyzed. Nanowires with no structural defects allow the growth of ZnO / Zn (1-x) Mg x O core-shell quantum wells. Plastic relaxation is studied, and the Mg composition is optimized to avoid it and attain an internal quantum efficiency as high as 54%. Concerning ion implantation, the defects are identified before and after annealing. They disappear in the near-surface, which lead to an easier recovery of nanowires compared to bulk ZnO. However, a recovered material with activated acceptors is not obtained.
identifier: NNT: 2011GRENI053
issued: 2026-05-27T08:55:24.545647
language: fr
modified: 2026-05-27T08:55:24.545653
contact point: Organization
  fn: CCSD
keyword: implantation-ionique
keyword: infoeu-reposemanticsdoctoralthesis
keyword: ion-implantation
keyword: led
keyword: microscopie-electronique-en-transmission
keyword: nanofil
keyword: nanowire
keyword: puits-quantiques
keyword: quantum-wells
keyword: spiotherengineering-sciences-physicsother
keyword: theses
keyword: transmission-electron-microscopy
keyword: zno
landing page: https://theses.hal.science/tel-00673255

Growth mechanism and crystalline defects in ZnO nanowire structures for LEDs
type: Distribution
format: HTML
issued: 2026-05-27T08:55:24.552565
modified: 2026-05-27T08:55:24.508582
access URL: https://theses.hal.science/tel-00673255

test_moissonnage_selune
type: Agent