@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00673255v1> a dcat:Dataset ;
    dct:description """
              Quantum well ZnO nanowires and p-type doping by nitrogen ion implantation are studied to make ultraviolet light-emitting diodes. O-polar pyramids and Zn-polar nanowires on sapphire and ZnO substrates are grown. Organized growth of nanowires on a masked Zn-polar ZnO is demonstrated. Similarly, GaN pyramids and nanowires are grown on Ga and N-polar GaN respectively. On sapphire, the dislocation elimination in the underlying pyramids is analyzed. Nanowires with no structural defects allow the growth of ZnO / Zn (1-x) Mg x O core-shell quantum wells. Plastic relaxation is studied, and the Mg composition is optimized to avoid it and attain an internal quantum efficiency as high as 54%. Concerning ion implantation, the defects are identified before and after annealing. They disappear in the near-surface, which lead to an easier recovery of nanowires compared to bulk ZnO. However, a recovered material with activated acceptors is not obtained.
            """ ;
    dct:identifier "NNT: 2011GRENI053" ;
    dct:issued "2026-05-27T08:55:24.545647"^^xsd:dateTime ;
    dct:language "fr" ;
    dct:modified "2026-05-27T08:55:24.545653"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Growth mechanism and crystalline defects in ZnO nanowire structures for LEDs" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00673255v1/resource/d37cd7c6-9e69-425b-9e47-d49282d63fee> ;
    dcat:keyword "implantation-ionique",
        "infoeu-reposemanticsdoctoralthesis",
        "ion-implantation",
        "led",
        "microscopie-electronique-en-transmission",
        "nanofil",
        "nanowire",
        "puits-quantiques",
        "quantum-wells",
        "spiotherengineering-sciences-physicsother",
        "theses",
        "transmission-electron-microscopy",
        "zno" ;
    dcat:landingPage <https://theses.hal.science/tel-00673255> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-tel-00673255v1/resource/d37cd7c6-9e69-425b-9e47-d49282d63fee> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-27T08:55:24.552565"^^xsd:dateTime ;
    dct:modified "2026-05-27T08:55:24.508582"^^xsd:dateTime ;
    dct:title "Growth mechanism and crystalline defects in ZnO nanowire structures for LEDs" ;
    dcat:accessURL <https://theses.hal.science/tel-00673255> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .

<https://theses.hal.science/tel-00673255> a foaf:Document .