Dissociation of H-related defect complex in InP using high energy light ions
type: Distribution
access URL: https://in2p3.hal.science/in2p3-00825653
format: HTML
issued: 2026-05-11T00:53:12.130110
modified: 2026-05-11T00:53:12.116268

Dissociation of H-related defect complex in InP using high energy light ions
type: Dataset
contact point: Organization
  fn: CCSD
keyword: electron-beam-irradiation
keyword: deposition
keyword: model
keyword: infoeu-reposemanticsarticle
keyword: gan
keyword: lifetime
keyword: indium-phosphide
keyword: desorption
keyword: journal-articles
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: raman-scattering
landing page: 0021-8979
description: High energy light ion irradiation has been used to anneal H-related defect complexes and to modify the electronic properties of semi-insulating InP (SI-InP). Raman and infrared spectroscopic measurements have been used to investigate the annihilation of native defects in SI-InP irradiated with 85 MeV C. Irradiation resulted in a decrease in sample resistivity by four orders of magnitudes and a change in the type of conductivity. The Raman spectroscopic results indicate an improvement in the InP sample due to irradiation up to an optimum fluence. The role of high electronic energy loss in defect annealing, which includes modification of the electrical properties and crystal structure of irradiated SI-InP, is discussed. (c) 2008 American Institute of Physics.
issued: 2026-05-11T00:53:12.128374
language: en
modified: 2026-05-11T00:53:12.128379

test_moissonnage_selune
type: Agent