Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k
type: Distribution
access URL: https://in2p3.hal.science/in2p3-00825472
format: HTML
issued: 2026-05-11T01:02:03.375834
modified: 2026-05-11T01:02:03.345552

test_moissonnage_selune
type: Agent

Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k
type: Dataset
contact point: Organization
  fn: CCSD
keyword: low-frequency-noise
keyword: ltd
keyword: infoeu-reposemanticsarticle
keyword: heterostructure
keyword: gaas
keyword: journal-articles
keyword: physphysphys-ins-detphysics-physicsphysics-physicsinstrumentation-and-detectors-physicsi
keyword: hemt
keyword: 1f-noise
keyword: low-temperature-electronics
landing page: 0022-2291
description: We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to develop high performance, low-power, low-frequency noise and low-temperature field-effect transistors for the future cryoelectronics. A high quality two-dimensional electron gas (2DEG) based on AlGaAs/GaAs heterostructure has been used to realize appropriately designed HEMTs with different gate configurations. With these transistors, we have obtained, for example, a transconductance of about 100 mS and a voltage gain of 26 with a power dissipation of less than 100 mu W at 4.2 K; and a corresponded equivalent input voltage noise of 1.2 nV/Hz(1/2) at 1 kHz and as low as 0.12 nV/Hz(1/2)s at 100 kHz.
issued: 2026-05-11T01:02:03.358524
language: en
modified: 2026-05-11T01:02:03.358530