Synthesis and characterization of ZnO thin film grown by electron beam evaporation
type: Distribution
access URL: https://in2p3.hal.science/in2p3-00087845
format: HTML
issued: 2026-05-09T04:56:46.031328
modified: 2026-05-09T04:56:45.998024

test_moissonnage_selune
type: Agent

Synthesis and characterization of ZnO thin film grown by electron beam evaporation
type: Dataset
contact point: Organization
  fn: CCSD
keyword: x-ray-diffraction
keyword: ii-vi-semiconductors
keyword: raman-spectra
keyword: fourier-transform-spectra
keyword: transparency
keyword: infrared-spectra
keyword: journal-articles
keyword: semiconductor-growth
keyword: photoluminescence
keyword: zinc-compounds
keyword: ultraviolet-spectra
keyword: infoeu-reposemanticsarticle
keyword: energy-gap
keyword: visible-spectra
keyword: electrical-resistivity
keyword: transmission-electron-microscopy
keyword: semiconductor-thin-films
keyword: annealing
keyword: 8105dz-8115ef-6855ac-6855jk-7866hf-7361ga
keyword: wide-band-gap-semiconductors
keyword: electrical-conductivity
keyword: electron-beam-deposition
keyword: evaporation
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: vacuum-deposition
keyword: electron-diffraction
landing page: 0021-8979
description: Highly transparent, conducting, highly oriented, and almost single phase ZnO films have been deposited by simple e-beam evaporation method, and the deposition parameters were optimized. The films were prepared by (a) evaporation of ZnO at different substrate temperatures and (b) evaporation of ZnO at room temperature and subsequent annealing of the films in oxygen ambient at different temperatures. The characterizations of the film were performed by optical absorption spectroscopy (UV-visible), Fourier transform infrared spectroscopy, resistivity measurement, transmission electron microscopy (TEM), photoluminescence, and x-ray diffraction measurement. Absorption spectra revealed that the films were highly transparent and the band gap of the pre- and postannealed films was in good agreement with the reported values. The band gap of the films increases on increasing the substrate temperature as well as annealing temperature, whereas the resistivity of the film decreases with substrate temperature and increases with annealing temperature. Fourier transform infrared spectroscopy of ZnO films confirms the presence of Zn–O bonding. X-ray diffraction, electron diffraction, and TEM images with high resolution and Raman spectra of the films showed the formation of crystalline ZnO having wurtzite structure.
issued: 2026-05-09T04:56:46.023765
language: en
modified: 2026-05-09T04:56:46.023769