@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00997378v1> a dcat:Dataset ;
    dct:description """
              A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the obtained transit delay contributions, the effective electron velocity is estimated to 0.85×107 cm.s-1. In addition, the effect of the image charge on the drain delay is experimentally demonstrated through the extraction of the mirroring coefficient α close to the predicted simulation value.
            """ ;
    dct:identifier "hal-00997378" ;
    dct:issued "2026-05-05T10:05:05.965042"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-05T10:05:05.965048"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00997378v1/resource/4029c527-b254-4980-8f6e-e102a812b362> ;
    dcat:keyword "aluminum-gallium-nitride",
        "conference-papers",
        "delays",
        "gallium-nitride",
        "hemts",
        "infoeu-reposemanticsconferenceobject",
        "logic-gates",
        "modfets",
        "performance-evaluation",
        "spiengineering-sciences-physics" ;
    dcat:landingPage <Proceedings%20of%2043rd%20European%20Solid-State%20Device%20Research%20Conference%2C%20ESSDERC%202013> .

<Proceedings%20of%2043rd%20European%20Solid-State%20Device%20Research%20Conference%2C%20ESSDERC%202013> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00997378v1/resource/4029c527-b254-4980-8f6e-e102a812b362> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-05T10:05:05.973838"^^xsd:dateTime ;
    dct:modified "2026-05-05T10:05:05.941777"^^xsd:dateTime ;
    dct:title "Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology" ;
    dcat:accessURL <https://hal.science/hal-00997378> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .