@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00994799v1> a dcat:Dataset ;
    dct:description """
              In this paper we present the simulation of Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated planar structure based on InAlAs/InGaAs adapted for photodetection at the wavelength 1.55 μm. We use the theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the interelectrode distance. The obtained results show a very low dark current, mainly due to the introduction of a thin layer to increase the Schottky barrier based on In0.52Al0.48As in the epitaxial structure of component. The obtained photocurrent and cut-off frequencies are very appreciable, these latter are mainly limited by the transit time of the photo-generated carriers given the low component capacity obtained by simulation.
            """ ;
    dct:identifier "hal-00994799" ;
    dct:issued "2026-05-05T10:32:29.159472"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-05T10:32:29.159476"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Simulation of the metal-semiconductor-metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 µm" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00994799v1/resource/8e131969-b1b9-4b6f-917a-7db99c445f1d> ;
    dcat:keyword "infoeu-reposemanticsarticle",
        "ingaas",
        "journal-articles",
        "metal-semiconductor-metal-msm",
        "optoelectronics",
        "photodetectors",
        "semiconductor-iii-v",
        "spiengineering-sciences-physics" ;
    dcat:landingPage <ISSN:%200030-4026> .

<ISSN:%200030-4026> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00994799v1/resource/8e131969-b1b9-4b6f-917a-7db99c445f1d> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-05T10:32:29.166308"^^xsd:dateTime ;
    dct:modified "2026-05-05T10:32:29.147640"^^xsd:dateTime ;
    dct:title "Simulation of the metal-semiconductor-metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 µm" ;
    dcat:accessURL <https://hal.science/hal-00994799> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .

